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Same model may have multiple batches, images only for reference.
SSM3J14TTE85LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3J14TTE85LF

Part No SSM3J14TTE85LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 2.7A TSM
Datasheet
SSM3J14TTE85LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Max Input Capacitance 413pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 85 mOhm @ 1.35A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSM
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 096794-SSM3J14TTE85LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3J14TTE85LF CAD Model

Description

The SSM3J14TTE85LF is a P-channel MOSFET manufactured by Toshiba Semiconductor and Storage.

  • Supply and Demand Status: sufficient
  • Designed for: various applications, including power management and switching
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 2.7A @ 25°C
  • Maximum Rds On: 85 mOhm @ 1.35A, 10V
  • Benefit: cost-effective and reliable solution for your MOSFET needs

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