The Toshiba Semiconductor and Storage SSM3J15F MOSFET is a P-channel transistor with a maximum power dissipation of 150mW (Ta).

• Power Dissipation: 150mW (Ta)
• Drive Voltage: 2.5V (Max Rds On) and 4V (Min Rds On)
• Continuous Drain Current: 100mA (Ta) @ 25°C
• Gate-Source Threshold Voltage: 1.7V @ 100μA
• Maximum Input Capacitance: 9.1pF @ 3V
• Maximum Gate-Source Voltage: ±20V
• Package Size: USM with a dimension of SC-70, SOT-323
• Supply and Demand Status: sufficient
• Ideal for: use in various electronic applications such as power supplies, battery chargers, and DC-DC converters