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Same model may have multiple batches, images only for reference.
SSM3J351R,LF
Same model may have multiple batches, images only for reference.

SSM3J351R,LF

Part No SSM3J351R,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 3.5A SOT-23F
Datasheet
SSM3J351R,LF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 15.1nC @ 10V
Max Input Capacitance 660pF @ 10V
Maximum Gate-Source Voltage +10V, -20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 134 mOhm @ 1A, 10V
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Case / Package SOT-23F
Dimension SOT-23-3 Flat Leads
Win Source Part Number 1102288-SSM3J351R,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM3J351R,LF CAD Model

Description

The SSM3J351R,LF is a P-Channel MOSFET designed by Toshiba Semiconductor and Storage.

  • Packaging: Reel
  • Case/Package: SOT-23F
  • Mounting Type: Surface Mount
  • Power Dissipation: 2W (Ta)
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 3.5A (Ta)
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Maximum Rds On @ Id,Vgs: 134 mOhm @ 1A, 10V
  • Maximum Gate-Source Voltage: +10V, -20V
  • Status: Active
  • Popularity: Medium
  • Halogen-Free: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
335+ $0.1504 $50.3840
815+ $0.1234 $100.5710
1,255+ $0.1196 $150.0980
1,730+ $0.1157 $200.1610
2,235+ $0.1119 $250.0965
2,995+ $0.1003 $300.3985
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Availability: 252,000 pieces
MOQ: 335 pcs
Order Increment : 1 pcs
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