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SSM3J35AMFV,L3F

Part No SSM3J35AMFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 250MA VESM  /  P-Channel 20 V 250mA (Ta) 150mW (Ta) Surface Mount VESM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSVII
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 100µA
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 42 pF @ 10 V
Power Dissipation (Max) 150mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package VESM
Package / Case SOT-723
Base Product Number SSM3J35
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Names SSM3J35AMFVL3FDKR,SSM3J35AMFVL3F,SSM3J35AMFVL3F(B,SSM3J35AMFV,L3F(B,SSM3J35AMFVL3FTR,SSM3J35AMFV,L3F(T,SSM3J35AMFVL3FCT
Standard Package 8,000
Win Source Part Number 1127608-SSM3J35AMFV,L3F
Ultra Librarian 3D Model Ultra Librarian SSM3J35AMFV,L3F CAD Model

Description

The Toshiba Semiconductor and Storage SSM3J35AMFV, L3F is a P-Channel MOSFET that is commonly used in electronic devices.

  • Series: U-MOSVII
  • Channel Type: P-Channel
  • Drain to Source Voltage (Vdss): 20V
  • Supply and Demand Status: Shortage
  • Power Dissipation: 150mW (Ta)
  • Operating Temperature: 150°C
  • Package: SOT-723
  • Input Capacitance (Ciss): 42 pF @ 10 V

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Pricing & Ordering

Quantity Unit Price Ext. Price
840+ $0.0597 $50.1480
2,045+ $0.0490 $100.2050
3,160+ $0.0475 $150.1000
4,350+ $0.0460 $200.1000
5,635+ $0.0444 $250.1940
7,540+ $0.0398 $300.0920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 37,740 pieces
MOQ: 840 pcs
Order Increment : 1 pcs
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