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SSM3K01T(TE85L,F)

Part No SSM3K01T(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 3.2A TSM
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
Max Input Capacitance 152pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 120 mOhm @ 1.6A, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSM
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 105992-SSM3K01T(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM3K01T(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage SSM3K01T(TE85L,F) is an N-Channel MOSFET used in various applications such as power management and industrial devices.

  • Status: Obsolete
  • Popularity: Medium
  • Maximum Rds On: 120 mOhm @ 1.6A, 4V
  • Drain-Source Breakdown Voltage: 30V
  • Packaging: TSM
  • Mounting: SMD (SMT) technology

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