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Same model may have multiple batches, images only for reference.
SSM3K15CT(TPL3) Real Image
Same model may have multiple batches, images only for reference.

SSM3K15CT(TPL3)

Part No SSM3K15CT(TPL3)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 0.1A CST3
Datasheet
SSM3K15CT(TPL3) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
Gate-Source Threshold Voltage 1.5V @ 100μA
Max Input Capacitance 7.8pF @ 3V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 100mW (Ta)
Maximum Rds On at Id,Vgs 4 Ohm @ 10mA, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package CST3
Dimension SC-101, SOT-883
Win Source Part Number 030884-SSM3K15CT(TPL3)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM3K15CT(TPL3) CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a N-Channel polarity transistor that is designed for use in discrete semiconductor products.

  • Polarity: N-Channel
  • Drive voltage: 2.5V and 4V for Max Rds On and Min Rds On, respectively.
  • Mounting: SMD (SMT)
  • Package: CST3
  • Dimension: SC-101, SOT-883
  • Drain-source breakdown voltage: 30V
  • Continuous drain current @ 25°C: 100mA (Ta)
  • Gate-source threshold voltage: 1.5V @ 100μA
  • Maximum input capacitance: 7.8pF @ 3V
  • Maximum gate-source voltage: ±20V
  • Maximum Rds On @ Id, Vgs: 4 Ohm @ 10mA, 4V

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