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SSM3K2615R,LF

Part No SSM3K2615R,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 2A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 3.3V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 150pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 300 mOhm @ 1A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23F
Dimension SOT-23-3 Flat Leads
Win Source Part Number 1102296-SSM3K2615R,LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM3K2615R,LF CAD Model

Description

This electronic component is manufactured by Toshiba Semiconductor and Storage and has a Win Source Part Number of 1102296-SSM3K2615R,LF.

  • MOSFET Technology: Yes
  • Channel Polarity: N-Channel
  • Maximum Power Dissipation: 1W (Ta)
  • Category: Discrete Semiconductor Product
  • Drive Voltage: 3.3V (Max Rds On) and 10V (Min Rds On)
  • Supply and Demand Status: Balanced
  • Operating Temperature Range: Up to 150°C (TJ)
  • Package: SOT-23F
  • Dimension: SOT-23-3 Flat Leads
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current: 2A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Maximum Input Capacitance: 150pF @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 300 mOhm @ 1A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2228 $50.1300
550+ $0.1829 $100.5950
850+ $0.1771 $150.5350
1,170+ $0.1714 $200.5380
1,510+ $0.1657 $250.2070
2,020+ $0.1486 $300.1720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 208,040 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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