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SSM3K341R,LF(T

Part No SSM3K341R,LF(T
Manufacturer Toshiba Semiconductor and Storage
Catalog OEM Parts ( S )
Description Trans MOSFET N-CH Si 60V 6A Automotive 3-Pin SOT-23F T/R
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Win Source Part Number 967357-SSM3K341R,LF(T
Categories OEM Parts( S )
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SSM3K341R,LF(T CAD Model

Description

The SSM3K341R,LF(T) is a P-channel MOSFET from Toshiba Semiconductor and Storage, designed for high-speed switching applications. It offers a low on-resistance, contributing to efficient power management and reduced energy loss. This MOSFET is suitable for load switching and power management circuits.

Applications:

  • Load Switching: Used to control power to various loads in electronic circuits.
  • Power Management Circuits: Employed in DC-DC converters and other power regulation applications.
  • Portable Devices: Found in smartphones, tablets, and other battery-powered devices for efficient power control.
  • Motor Control: Used to control small DC motors.

Features:

  • P-Channel MOSFET: Allows for easy integration into various circuit designs.
  • Low On-Resistance (RDS(on)): Minimizes power loss and improves efficiency. Specific RDS(on) values depend on gate voltage and temperature.
  • Small Surface Mount Package: Enables compact circuit designs.
  • High-Speed Switching: Facilitates fast and efficient switching operations.
  • Lead-Free and RoHS Compliant: Complies with environmental regulations.

Benefits:

  • Improved Power Efficiency: Low on-resistance reduces power dissipation, leading to higher efficiency.
  • Compact Design: Small package size allows for miniaturization of electronic devices.
  • Reliable Performance: Toshiba's quality manufacturing ensures consistent and dependable operation.
  • Simplified Circuit Design: P-channel configuration simplifies certain circuit topologies.

Additional Details:

The SSM3K341R,LF(T) has a specified drain-source voltage (VDS) and gate-source voltage (VGS). The maximum drain current (ID) is dependent on temperature. The MOSFET is typically supplied in a surface-mount package suitable for automated assembly. Detailed electrical characteristics, including capacitances and gate charge, can be found in the datasheet. The datasheet also provides information on thermal resistance, which is crucial for thermal management in power applications. Always refer to the official Toshiba datasheet for the most accurate and up-to-date specifications and application guidelines.

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Pricing & Ordering

Quantity Unit Price Ext. Price
425+ $0.1180 $50.1500
905+ $0.1105 $100.0025
1,405+ $0.1068 $150.0540
2,015+ $0.0993 $200.0895
2,620+ $0.0956 $250.4720
3,270+ $0.0918 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 252,420 pieces
MOQ: 425 pcs
Order Increment : 1 pcs
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