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Same model may have multiple batches, images only for reference.
SSM5G10TU(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM5G10TU(TE85L,F)

Part No SSM5G10TU(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1.5A UFV
Datasheet
SSM5G10TU(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 6.4nC @ 4V
Max Input Capacitance 250pF @ 10V
Maximum Gate-Source Voltage ±8V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 213 mOhm @ 1A, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package UFV
Dimension 6-SMD (5 Leads), Flat Lead
Win Source Part Number 030887-SSM5G10TU(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM5G10TU(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage 348598 is a P-channel MOSFET with a Schottky diode feature.

  • Maximum power dissipation: 500mW
  • Mounting: SMD package
  • Maximum drain-source breakdown voltage: 20V
  • Continuous drain current @ 25°C: 1.5A
  • Status: obsolete (EOL) product
  • Temperature range: 150°C (TJ)

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38+ $3.0815 $117.0970
59+ $2.9857 $176.1563
80+ $2.8887 $231.0960
104+ $2.7928 $290.4512
139+ $2.5040 $348.0560
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Availability: 3,000 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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