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SSM5N15FU,LF

Part No SSM5N15FU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 0.1A USV
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
Max Input Capacitance 7.8pF @ 3V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200mW (Ta)
Maximum Rds On at Id,Vgs 4 Ohm @ 10mA, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package USV
Dimension 5-TSSOP, SC-70-5, SOT-353
Win Source Part Number 1102314-SSM5N15FU,LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM5N15FU,LF CAD Model

Description

The Toshiba Semiconductor and Storage SSM5N15FU,LF is a MOSFET transistor with a drain-source breakdown voltage of 30V and a continuous drain current at 25°C of 100mA (Ta).

  • Power Dissipation (Max): 200mW (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
  • Mounting Type: Surface Mount Technology (SMT)
  • Case/Package: USV
  • Temperature Range: 150°C (TJ)
  • Category: Discrete Semiconductor Products
  • Maximum Rds On @ Id,Vgs: 4 Ohm @ 10mA, 4V
  • Product Status: Active
  • Popularity: Medium
  • Supply and Demand: Sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
285+ $0.1757 $50.0745
695+ $0.1442 $100.2190
1,075+ $0.1397 $150.1775
1,480+ $0.1352 $200.0960
1,915+ $0.1307 $250.2905
2,560+ $0.1172 $300.0320
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 285 pcs
Order Increment : 1 pcs
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