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SSM5N16FUTE85LF

Part No SSM5N16FUTE85LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 0.1A USV
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V
Max Input Capacitance 9.3pF @ 3V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 200mW (Ta)
Maximum Rds On at Id,Vgs 3 Ohm @ 10mA, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package USV
Dimension 5-TSSOP, SC-70-5, SOT-353
Win Source Part Number 103168-SSM5N16FUTE85LF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM5N16FUTE85LF CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a high-performance N-channel polarity transistor that is ideal for use in a variety of electronic circuits.

  • Drain-source breakdown voltage: 20V
  • Continuous drain current @ 25°C: 100mA
  • Maximum gate-source voltage: ±10V
  • Maximum Rds On @ Id, Vgs: 3 Ohm @ 10mA, 4V
  • Case/Package: 5-TSSOP, SC-70-5, SOT-353
  • Maximum input capacitance: 9.3pF @ 3V
  • Operating Temperature: 150°C (TJ)
  • Power Dissipation: 200mW (Ta)
  • This MOSFET is suitable for use in various applications such as switching regulators, power management, and DC-DC converters.

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