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SSM6J206FE(TE85L,F)

Part No SSM6J206FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description MOSFET P-CH 20V 2A ES6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel(TR)
FET Type MOSFET P-Channel, Metal Oxide
FET Feature Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Rds On (Max) @ Id, Vgs 130 mOhm @ 1A, 4V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) @ Vds 335pF @ 10V
Power - Max 500mW
Operating Temperature Range 150°C (TJ)
Mounting Style SMD/SMT
Package SOT-563, SOT-666
Manufacturer Device Package ES6 (1.6x1.6)
Win Source Part Number 030888-SSM6J206FE(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM6J206FE(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage SSM6J206FE(TE85L,F) is a P-channel MOSFET with a metal oxide feature, logic level gate, and 1.8V drive.

  • This component is designed for use in electronic circuits that require a drain to source voltage (Vdss) of 20V and a continuous drain current (Id) of 2A @ 25°C.
  • The SOT-563 and SOT-666 packaging options make it easy to mount this component on a printed circuit board.
  • Supply and demand status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
525+ $0.0954 $50.0850
1,280+ $0.0783 $100.2240
1,980+ $0.0759 $150.2820
2,725+ $0.0734 $200.0150
3,525+ $0.0710 $250.2750
4,720+ $0.0636 $300.1920
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,900 pieces
MOQ: 525 pcs
Order Increment : 1 pcs
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