The Toshiba Semiconductor and Storage SSM6J215FE(TE85L,F) is a P-Channel MOSFET transistor with a drain-source breakdown voltage of 20V and a maximum continuous drain current of 3.4A at 25°C.

• Drain-Source Breakdown Voltage: 20V
• Maximum Continuous Drain Current: 3.4A @ 25°C
• Maximum Gate-Source Voltage: ±8V
• Maximum Rds On: 59 mOhm @ 3A and 4.5V
• Package: ES6 case/package
• Dimensions: SOT-563, SOT-666
• Gate-Source Threshold Voltage: 1V @ 1mA
• Maximum Gate Charge: 10.4nC @ 4.5V
• Maximum Input Capacitance: 630pF @ 10V
• Suitable for: Discrete semiconductor products
• Mounting: SMD (SMT) technology
• Power Dissipation: 500mW (Ta)
• Drive Voltage (Max Rds On): 1.5V
• Drive Voltage (Min Rds On): 4.5V