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SSM6J51TUTE85LF

Part No SSM6J51TUTE85LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 4A UF6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Cut Reel
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 2.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Input Capacitance 1700pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 54 mOhm @ 2A, 2.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package UF6
Dimension 6-SMD, Flat Leads
Win Source Part Number 096758-SSM6J51TUTE85LF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6J51TUTE85LF CAD Model

Description

The SSM6J51TUTE85LF is a P-channel MOSFET from Toshiba Semiconductor and Storage, primarily used for load switching and power management in portable electronic devices. It's designed with a focus on minimizing power loss and maximizing efficiency, making it well-suited for battery-powered applications.

Applications

  • Load switch in portable devices like smartphones, tablets and laptops.
  • Power management circuits
  • DC-DC conversion
  • Battery protection circuits

Features

  • P-Channel MOSFET
  • Low Drain-Source On-Resistance (RDS(ON))
  • Fast Switching Speed
  • Low Threshold Voltage
  • Small Surface Mount Package
  • Lead-Free Plating

Benefits

  • High Efficiency: The low RDS(ON) minimizes power dissipation, leading to better battery life in portable electronics.
  • Fast Response Times: Enables quick and efficient switching for optimized performance in power management.
  • Simplified Design: Low gate threshold voltage allows direct drive from logic level signals, simplifying the gate drive circuitry.
  • Compact Footprint: The small surface mount package saves board space, making it ideal for densely populated PCBs.
  • Environmentally Compliant: Lead-free plating meets environmental regulations.
  • Reliable Performance: Toshiba's manufacturing process ensures a reliable and consistent performance.

Additional Details

The SSM6J51TUTE85LF is packaged in a SOT-23F package. The 'TE85LF' suffix indicates tape and reel packaging for automated assembly and lead-free plating. This MOSFET's characteristics make it ideal for applications requiring minimal power loss and high switching efficiency. Its primary function involves switching power to different parts of a system based on specific needs, thus enhancing the lifespan of batteries and efficiency of the product it is used in. It’s engineered to work across a wide range of operating temperatures and voltages. Its specific design caters to applications where space is limited. It is also ideal for DC-DC converters providing stable power to various loads.

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2610 $58.7250
540+ $0.2148 $115.9920
835+ $0.2079 $173.5965
1,150+ $0.2010 $231.1500
1,480+ $0.1952 $288.8960
1,990+ $0.1744 $347.0560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,824 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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Shipping Information

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