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Same model may have multiple batches, images only for reference.
SSM6K204FE,LF
Same model may have multiple batches, images only for reference.

SSM6K204FE,LF

Part No SSM6K204FE,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V
Rds On (Max) @ Id, Vgs 126mOhm @ 1A, 4V
Vgs(th) (Max) @ Id 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 3.4 nC @ 10 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 195 pF @ 10 V
Power Dissipation (Max) 500mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package ES6
Package / Case SOT-563, SOT-666
Base Product Number SSM6K204
Other Names SSM6K204FELF
Standard Package 4,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1277958-SSM6K204FE,LF
Ultra Librarian 3D Model Ultra Librarian SSM6K204FE,LF CAD Model

Description

The Toshiba Semiconductor and Storage 1277958-SSM6K204FE,LF is a N-channel MOSFET transistor with a drain to source voltage of 20V and a continuous drain current of 2A.

  • Maximum Rds On: 126mOhm @ 1A and 4V
  • Gate Charge (Qg): 3.4 nC @ 10V
  • Input Capacitance (Ciss): 195 pF @ 10Vds

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,040 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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