The SSM6K211FE(TE85L) is an N-Channel MOSFET from Toshiba Semiconductor and Storage, designed for switching applications. It is suitable for load switching and power management circuits. The low on-resistance characteristic minimizes power loss, enhancing the overall efficiency of the system. The small surface mount package allows for high-density mounting, saving valuable board space.

Applications

• Load switch
• DC-DC converter
• Power management circuit

Features

• N-Channel MOSFET
• Low drain-source on-resistance
• Small surface mount package
• Low voltage drive

Benefits

• Reduces power loss, improving overall system efficiency.
• Allows for high-density mounting due to its small package.
• Simplified gate drive requirements with low voltage drive.

Technical Specifications

The SSM6K211FE(TE85L) typically features a drain-source voltage (VDS) rating of 20V, a gate-source voltage (VGS) rating of ±8V, and a drain current (ID) rating depending on the thermal conditions and the specific datasheet values. The drain-source on-resistance (RDS(ON)) is a key parameter for minimizing power loss. The gate threshold voltage (VGS(th)) is also an important characteristic. Refer to the Toshiba datasheet for SSM6K211FE(TE85L) for precise specifications.

The package is a surface mount type, ensuring efficient assembly. The device adheres to RoHS compliance, ensuring environmental regulations are met.