The Toshiba Semiconductor and Storage SSM6K361NU,LF MOSFET is a N-Channel FET type device. It has a drain to source voltage (Vdss) of 100 V and a continuous drain current of 3.5A at 25°C. The Rds On (Max) at Id, Vgs is 69mOhm @ 2A, 10V. The Vgs(th) (Max) @ Id is 2.5V @ 100μA and the gate charge (Qg) (Max) @ Vgs is 3.2 nC @ 4.5 V. The input capacitance (Ciss) (Max) @ Vds is 430 pF @ 15 V. The MOSFET is available in 6-WDFN Exposed Pad package and 6-UDFNB (2x2) supplier device package. It has a power dissipation (max) of 1.25W (Ta) and can operate at a temperature range of 150°C. The MOSFET is ideal for use in Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single applications.