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SSM6K405TU

Part No SSM6K405TU
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description High-Speed Switching Applications
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1259585-SSM6K405TU
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Balance
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Description

The SSM6K405TU is an N-channel MOSFET from Toshiba Semiconductor and Storage. This device is designed for high-speed switching applications and load switching, offering low on-resistance and fast switching performance. It is commonly used in portable devices and power management circuits due to its small size and efficient operation.

Applications:

  • Load Switching: Efficiently switches power to various loads in electronic devices.
  • DC-DC Converters: Used as a switching element to regulate voltage in DC-DC converters.
  • Power Management Circuits: Controls power distribution and optimizes energy usage in portable devices.
  • Portable Devices: Ideal for smartphones, tablets, and other battery-powered devices.
  • High-Speed Switching: Suitable for applications requiring fast switching speeds.

Features:

  • Low On-Resistance (RDS(ON)): Minimizes power loss and improves efficiency.
  • High-Speed Switching: Enables fast switching performance.
  • Small Package: Allows for compact circuit designs.
  • Logic Level Drive: Can be driven directly by logic level signals.
  • RoHS Compliant: Complies with environmental regulations.

Benefits:

  • Improved Efficiency: Low on-resistance reduces power dissipation and improves overall efficiency.
  • Compact Design: Small package allows for smaller and lighter portable devices.
  • Simplified Circuit Design: Logic level drive simplifies the driving circuitry.
  • Enhanced Battery Life: Efficient operation extends battery life in portable devices.
  • Reliable Performance: Provides stable performance under various operating conditions.

Technical Specifications:

The SSM6K405TU typically features a drain-source voltage (VDSS) of 30V and a drain current (ID) of around 3A. The on-resistance (RDS(ON)) is very low, typically in the milliohm range, which minimizes power loss. The gate threshold voltage (VGS(th)) is designed to be compatible with logic level signals, allowing for easy interfacing with microcontrollers and other digital circuits. The package is typically a small surface-mount package such as a SOT-23 or similar. It is designed to operate over a wide temperature range.

This MOSFET offers a combination of low on-resistance, fast switching speed, and small size, making it well-suited for use in portable devices and power management applications.

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