The U-MOSIV series MOSFET transistor from Toshiba Semiconductor and Storage is a N-Channel FET type with a drain to source voltage (Vdss) of 20V and a current - continuous drain (Id) of 10A (Ta) @ 25°C.

• Rds On (Max) @ Id, Vgs: 12mOhm @ 7A, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 1mA
• Power Dissipation (Max): 1W (Ta)
• Package/Case: 6-SMD, Flat Leads
• Supplier Device Package: UF6
• Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 10 V
• Operating Temperature Range: 150°C (TJ)
• Drive Voltage : 2.5V, 4.5V