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SSM6K517NU,LF

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Part No	SSM6K517NU,LF
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 6A 6UDFNB / N-Channel 30 V 6A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2)
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Toshiba Semiconductor and Storage
Package	Tape & Reel
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	39.1mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	3.2 nC @ 4.5 V
Vgs (Max)	+12V, -8V
Input Capacitance (Ciss) (Max) @ Vds	310 pF @ 15 V
Power Dissipation (Max)	1.25W (Ta)
Temperature Range - Operating	150°C
Mounting	SMD (SMT)
Supplier Device Package	6-UDFNB (2x2)
Package / Case	6-WDFN Exposed Pad
Base Product Number	SSM6K517
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	264-SSM6K517NULFDKR,264-SSM6K517NULFTR,264-SSM6K517NULFCT
Standard Package	3,000
Win Source Part Number	1140726-SSM6K517NU,LF
Ultra Librarian 3D Model	Ultra Librarian SSM6K517NU,LF CAD Model

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Description

The SSM6K517NU,LF is an N-channel MOSFET used in electronic circuits.

Drain to Source Voltage (Vdss): 30V
Continuous Drain Current (Id): 6A (Ta)
Temperature Range: 150°C
Manufacturer: Toshiba Semiconductor and Storage

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