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Same model may have multiple batches, images only for reference.
SSM6L11TU(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6L11TU(TE85L,F)

Part No SSM6L11TU(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 0.5A UF6 S
Datasheet
SSM6L11TU(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 500mA
Maximum Rds On at Id,Vgs 145 mOhm @ 250MA, 4V
Gate-Source Threshold Voltage 1.1V @ 100μA
Max Input Capacitance 268pF @ 10V
Maximum Power Dissipation 500mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package UF6
Win Source Part Number 104179-SSM6L11TU(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SSM6L11TU(TE85L,F) CAD Model

Description

The SSM6L11TU(TE85L,F) is an N and P-Channel FET designed for use in discrete semiconductor products.

  • Features: logic level gate
  • Package: UF6 case
  • Status: obsolete
  • Value: great value due to its medium popularity and balanced supply and demand status
  • Maximum Power Dissipation: 500mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 500mA
  • Reliability: reliable choice for your electronic projects

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