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Same model may have multiple batches, images only for reference.
SSM6L35FE,LM Real Image
Same model may have multiple batches, images only for reference.

SSM6L35FE,LM

Part No SSM6L35FE,LM
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 0.18A/0.1A ES6
Datasheet
SSM6L35FE,LM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 180mA, 100mA
Maximum Rds On at Id,Vgs 3 Ohm @ 50mA, 4V
Gate-Source Threshold Voltage 1V @ 1mA
Max Input Capacitance 9.5pF @ 3V
Maximum Power Dissipation 150mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package ES6 (1.6x1.6)
Win Source Part Number 1102322-SSM6L35FE,LM
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SSM6L35FE,LM CAD Model

Description

The Toshiba Semiconductor and Storage SSM6L35FE,LM N and P-Channel Logic Level Gate FET is a medium popularity component that is supplied in reel packaging.

  • Power Dissipation: 150mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 180mA and 100mA
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Input Capacitance: 9.5pF @ 3V
  • Rds On @ Id,Vgs: 3 Ohm @ 50mA, 4V

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Pricing & Ordering

Quantity Unit Price Ext. Price
345+ $0.1456 $50.2320
840+ $0.1195 $100.3800
1,300+ $0.1157 $150.4100
1,790+ $0.1120 $200.4800
2,310+ $0.1083 $250.1730
3,090+ $0.0971 $300.0390
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,000 pieces
MOQ: 345 pcs
Order Increment : 1 pcs
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