The 099871-SSM6N43FU,LF is a 2 N-Channel (Dual) FET from Toshiba Semiconductor and Storage.

• Feature: It has a logic level gate with a 1.5V drive and is ideal for use in various applications including power management, battery chargers, and DC-DC converters.
• Supply and Demand Status: Sufficient
• Case/Package: US6
• Maximum Power Dissipation: 200mW
• Drain-Source Breakdown Voltage: 20V
• Continuous Drain Current: 500mA @ 25°C
• Gate-Source Threshold Voltage: 1V @ 1mA
• Max Gate Charge: 1.23nC @ 4V
• Maximum Input Capacitance: 46pF @ 10V
• Maximum Rds On at Id,Vgs: 630 mOhm @ 200mA, 5V