Toshiba Semiconductor and Storage 796826-TK12Q60W,S1VQ is a MOSFET integrated circuit.

• Series: DTMOSIV
• Packaging: tube
• Mounting: through hole
• Operating temperature range: 150°C (TJ)
• Package: TO-251-3 Stub Leads, IPak
• Technology: super junction FET
• Current continuous drain (Id) @ 25°C: 11.5A (Ta)
• Drive voltage (Max Rds On, Min Rds On): 10V
• Channel type: N
• Drain source voltage: 600V
• Vgs(th) (Maximum) @ Id: 3.7V @ 600μA
• Gate charge (Qg) (Maximum) @ Vgs: 25nC @ 10V
• Input capacitance (Ciss) (Maximum) @ Vds: 890pF @ 300V
• Vgs (Maximum): ±30V
• Power dissipation (Maximum): 100W (Tc)
• Rds On (Maximum) @ Id, Vgs: 340 mOhm @ 5.8A, 10V