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Same model may have multiple batches, images only for reference.
SSM6N55NU,LF(T Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM6N55NU,LF(T

Part No SSM6N55NU,LF(T
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 4A UDFN6
Datasheet
SSM6N55NU,LF(T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4A
Maximum Rds On at Id,Vgs 46 mOhm @ 4A, 10V
Gate-Source Threshold Voltage 2.5V @ 100μA
Max Gate Charge 2.5nC @ 4.5V
Max Input Capacitance 280pF @ 15V
Maximum Power Dissipation 1W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-μDFN(2x2)
Win Source Part Number 1102326-SSM6N55NU,LF(T
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SSM6N55NU,LF(T CAD Model

Description

The SSM6N55NU, LF(T is a dual N-channel MOSFET that belongs to the discrete semiconductor products category.

  • Maximum Power Dissipation: 1W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 4A @ 25°C
  • Maximum Rds On: 46 mOhm @ 4A, 10V
  • Maximum Gate Charge: 2.5nC @ 4.5V
  • Input Capacitance: 280pF @ 15V
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3989 $59.9725
59+ $1.9693 $116.1887
91+ $1.9069 $173.5279
126+ $1.8457 $232.5582
162+ $1.7845 $289.0890
217+ $1.5997 $347.1349
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Availability: 8,000 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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