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SSM6P25TU,LF

Part No SSM6P25TU,LF
Manufacturer Toshiba Semiconductor and Storage
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Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Balance
Win Source Part Number 838859-SSM6P25TU,LF
Ultra Librarian 3D Model Ultra Librarian SSM6P25TU,LF CAD Model

Description

The SSM6P25TU,LF is a P-channel MOSFET from Toshiba Semiconductor and Storage, designed for load switching and power management applications. This MOSFET is characterized by its low on-resistance, contributing to efficient power conversion and minimal power loss.

Applications

  • Load switching in portable devices
  • Power management circuits in battery-powered systems
  • DC-DC converters
  • Power switches for various electronic circuits

Features

  • Low drain-source on-resistance (RDS(ON)) reduces conduction losses.
  • Low threshold voltage allows for efficient operation at low gate drive voltages.
  • Compact surface mount package for high-density board assembly.
  • Halogen-free design, compliant with environmental regulations.
  • Enhancement mode operation.

Benefits

  • Improved energy efficiency due to reduced RDS(ON).
  • Extended battery life in portable applications due to lower power consumption.
  • Simplified gate drive circuitry due to low threshold voltage.
  • Smaller PCB footprint, enabling more compact designs.
  • Environmentally friendly due to halogen-free construction.

Technical Specifications

The SSM6P25TU,LF typically features a drain-source voltage (VDS) rating suitable for low-voltage applications, and a continuous drain current (ID) rating that supports moderate load currents. The RDS(ON) is a key parameter, usually specified at different gate-source voltages (VGS) to indicate switching efficiency. The gate threshold voltage (Vth) is also a crucial specification for determining the drive requirements. Detailed specifications can be found in the product datasheet provided by Toshiba. The package type is a surface mount package (e.g., SOT-23 or similar) for automated assembly. It's designed to operate over a wide temperature range, ensuring reliable performance in various environments.

This MOSFET is particularly well-suited for applications where minimizing power loss and maximizing battery life are critical, such as in smartphones, tablets, and other portable electronic devices. Its low on-resistance and compact package make it a versatile choice for a wide range of power switching applications.

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