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T2N7002BK,LM

Part No T2N7002BK,LM
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 0.4A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.1V @ 250μA
Max Gate Charge 0.6nC @ 4.5V
Max Input Capacitance 40pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 320mW (Ta)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 100mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1104817-T2N7002BK,LM
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian T2N7002BK,LM CAD Model

Description

The T2N7002BK,LM is an N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from Toshiba Semiconductor and Storage. This transistor is designed for low-voltage, low-current switching applications. It's commonly used as a small-signal switch in various electronic circuits.

Applications

  • Low-side switching in DC-DC converters.
  • Load switching for small loads such as LEDs and relays.
  • Analog switches in signal multiplexing circuits.
  • Level shifting in digital circuits.
  • Battery-powered devices.

Features

  • N-channel enhancement mode.
  • Low on-resistance (RDS(on)).
  • Low gate threshold voltage (VGS(th)).
  • Small surface-mount package (SOT-23).
  • High-speed switching capability.
  • Halogen-free and RoHS compliant.

Benefits

  • Efficient switching performance due to low RDS(on), minimizing power losses.
  • Easy to drive with low-voltage logic signals due to low VGS(th).
  • Space-saving design for compact electronic devices.
  • Improved system efficiency in battery-powered applications.
  • Reliable operation in a variety of environmental conditions.

Additional Details

The T2N7002BK,LM is characterized by its low on-resistance and gate threshold voltage, making it suitable for applications where efficient switching is crucial. It's supplied in a small SOT-23 package, which allows for high-density board layouts. Typical specifications include a drain-source voltage (VDS) rating, a gate-source voltage (VGS) rating, and a continuous drain current (ID) rating. Consult the datasheet for precise values. It is designed for reflow soldering processes used in automated manufacturing.

When selecting a MOSFET, it's important to consider parameters such as voltage and current ratings, on-resistance, and gate charge. The T2N7002BK,LM offers a good balance of performance and size for many low-power switching applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3,575+ $0.0140 $50.0500
8,700+ $0.0115 $100.0500
13,395+ $0.0112 $150.0240
18,520+ $0.0108 $200.0160
24,040+ $0.0104 $250.0160
31,915+ $0.0094 $300.0010
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 51,000 pieces
MOQ: 3575 pcs
Order Increment : 1 pcs
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