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Same model may have multiple batches, images only for reference.
TBC847B Real Image
Same model may have multiple batches, images only for reference.

TBC847B

Part No TBC847B
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description X34 PB-F SOT-23 TRANSISTOR FOR L
Datasheet
TBC847B Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 400mV @ 100mA, 5mA
Collector Cut-off Current(Max) 30nA (ICBO)
Typical Gain (hFE) (Min) 200 @ 2mA, 5V
Maximum Power Dissipation 320mW
Frequency - Transition 100MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Win Source Part Number 355746-TBC847B
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TBC847B CAD Model

Description

The TBC847B is a high popularity NPN transistor manufactured by Toshiba Semiconductor and Storage.

  • Category: Discrete semiconductor product
  • Status: Active
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Power Dissipation: 320mW
  • Transistor Polarity: NPN
  • Frequency-Transition: 100MHz
  • Typical Gain: 200 @ 2mA, 5V
  • Maximum Current Collector: 150mA

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Pricing & Ordering

Quantity Unit Price Ext. Price
860+ $0.0583 $50.1380
2,095+ $0.0478 $100.1410
3,240+ $0.0463 $150.0120
4,465+ $0.0448 $200.0320
5,775+ $0.0433 $250.0575
7,715+ $0.0389 $300.1135
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 860 pieces
MOQ: 860 pcs
Order Increment : 1 pcs
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