The TC200G62AF-0001 is a NAND flash memory product from Toshiba Semiconductor and Storage. This specific part is designed for embedded applications, providing non-volatile storage with high reliability and performance. It's tailored for use in systems requiring robust data storage in challenging environments.

Applications

• Embedded systems
• Industrial control devices
• Automotive infotainment systems
• Data loggers
• Networking equipment

Features

• NAND flash technology
• High-speed data access
• Non-volatile storage
• Wide operating temperature range
• Low power consumption

Benefits

• Reliable data storage in harsh environments.
• Fast boot times and application loading due to high-speed access.
• Data retention without power, crucial for embedded applications.
• Extended product lifespan due to robust design and manufacturing.
• Reduced power consumption, extending battery life in portable devices.

Additional Details

The TC200G62AF-0001's density is 2Gb (256MB). It uses a single-level cell (SLC) architecture, known for its superior endurance and data retention compared to multi-level cell (MLC) or triple-level cell (TLC) NAND flash. The operating voltage is typically 3.3V. It is packaged in a FBGA (Fine-pitch Ball Grid Array) for surface mounting. Toshiba's advanced manufacturing processes and quality control ensure the reliability of this NAND flash memory. Its ECC (Error Correction Code) capabilities ensure data integrity during read and write operations. This part is designed to comply with relevant industry standards for shock, vibration, and temperature cycling.