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TC514900AZ-80

Part No TC514900AZ-80
Manufacturer Toshiba Semiconductor and Storage
Catalog Unclassified Memory
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Category Integrated Circuits(ICs)
Family Memory
Win Source Part Number 196479-TC514900AZ-80
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TC514900AZ-80 CAD Model

Description

The TC514900AZ-80 is a high-speed static RAM (SRAM) manufactured by Toshiba Semiconductor and Storage. This SRAM is designed for applications requiring fast data access and storage, offering a cost-effective solution for a range of embedded systems and memory-intensive tasks.

Applications:

  • Cache memory in microprocessors.
  • Buffer memory in networking equipment.
  • Data storage in industrial control systems.
  • Memory for digital signal processing (DSP) applications.
  • Embedded systems requiring fast and reliable memory.

Features:

  • High-speed access time: 80ns.
  • Organized as 64K words by 8 bits.
  • Low power consumption.
  • TTL compatible inputs and outputs.
  • Single 5V power supply.
  • Three-state outputs for easy memory expansion.

Benefits:

  • Fast data access ensures efficient system performance.
  • Low power consumption extends battery life in portable devices.
  • Easy integration with standard TTL logic simplifies system design.
  • High reliability ensures data integrity.
  • Cost-effective solution for various memory requirements.

Technical Specifications:

The TC514900AZ-80 operates with a single 5V power supply and features a typical operating current of [Search Required - Insert Typical Operating Current here based on datasheet]. It offers a data retention voltage of [Search Required - Insert Data Retention Voltage here based on datasheet]. The operating temperature range is typically from 0°C to 70°C, making it suitable for standard commercial applications. The package type is [Search Required - Insert Package Type here based on datasheet]. The device incorporates three-state outputs, which allow for simplified memory expansion by preventing bus contention when multiple memory devices are connected to the same bus. Further electrical characteristics, such as input and output voltage levels, timing parameters, and power dissipation details, can be found in the official Toshiba datasheet. The 80ns access time ensures quick read and write operations, reducing latency and improving overall system responsiveness.

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