The TC55VCM416BTGN55 is a high-speed, low-power 4-Mbit Static RAM (SRAM) manufactured by Toshiba Semiconductor and Storage. This SRAM is designed for applications requiring fast access times and low power consumption, such as cache memory, buffer memory, and portable devices. The device is organized as 256K words by 16 bits and operates on a single 3.3V power supply.

Applications

• Cache memory in microprocessors
• Buffer memory in communication systems
• Working memory in embedded systems
• Portable electronic devices
• Industrial control systems

Features

• Organization: 256K words x 16 bits
• Access time: 55 ns
• Operating voltage: 3.3V
• Low power consumption
• TTL compatible inputs and outputs
• Available in a TSOP package

Benefits

• Fast data access for high-performance applications
• Reduced power consumption for extended battery life
• Easy integration with TTL logic
• Compact size for space-constrained designs

Additional Details

The TC55VCM416BTGN55 SRAM offers a fast access time of 55ns, enabling rapid data retrieval and storage. Its low power consumption makes it suitable for use in battery-powered devices, minimizing energy drain. The TTL compatible inputs and outputs simplify interfacing with other digital components. The device is available in a TSOP (Thin Small Outline Package), which allows for efficient use of board space. The SRAM's wide operating temperature range ensures reliable performance in a variety of environments. The datasheet provides detailed specifications, including power consumption characteristics, timing parameters, and operating conditions. This SRAM is designed to meet the demands of modern electronic systems, providing a balance of speed, power efficiency, and reliability. Its robust design and versatile characteristics make it a popular choice for a wide range of memory applications.