The TC58NVG0S3ETAI0B3H is a single 32Gbit (4Gx8) NAND Flash memory device manufactured by Toshiba (now Kioxia). It's based on advanced 24nm process technology, providing high density and reliable data storage. This device is commonly used in various embedded systems and consumer electronics applications, where non-volatile memory is essential.

Applications:

• Solid State Drives (SSDs)
• USB Flash Drives
• Memory Cards (SD Cards, microSD Cards)
• Embedded Systems
• Mobile Phones

Features:

• 32Gbit (4Gx8) Density
• NAND Flash Technology
• 24nm Process Technology
• Single-Level Cell (SLC)
• Toggle DDR Interface
• Page Size: 8KB
• Block Size: 512KB
• Operating Voltage: 3.3V

Benefits:

• High Density: Provides ample storage capacity for data and applications.
• Reliable Data Storage: NAND Flash technology ensures data retention.
• Fast Data Transfer: Toggle DDR interface enables high-speed data transfer rates.
• Low Power Consumption: Minimizes energy consumption, extending battery life.
• Compact Size: Allows for integration in space-constrained applications.

Additional Details:

The TC58NVG0S3ETAI0B3H is a Single-Level Cell (SLC) NAND Flash memory, which offers higher endurance and reliability compared to Multi-Level Cell (MLC) or Triple-Level Cell (TLC) NAND. It uses a Toggle DDR interface for fast data transfer. The operating voltage is typically 3.3V. The device features a page size of 8KB and a block size of 512KB. It supports various error correction code (ECC) schemes to ensure data integrity. The device's endurance is rated for a specific number of program/erase cycles. The specific package type is a TSOP (Thin Small Outline Package). This NAND Flash memory is suitable for applications requiring high performance, reliability, and density. Proper memory management and wear leveling techniques are essential for maximizing the lifespan of the device. It is lead-free and RoHS compliant. The controller interface should be designed to match the Toggle DDR signaling specifications for optimal performance.