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TC58NYG0S3HBAI6

Part No TC58NYG0S3HBAI6
Manufacturer Toshiba Semiconductor and Storage
Catalog Flash
Description NAND Flash Memory(SLC Middle Capacity) | IC FLASH 1G PARALLEL 67VFBGA
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer Toshiba Memory America, Inc.
Packaging Tray
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 1Gb (128M x 8)
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Supply Voltage (V) 1.7V ~ 1.95V
Temperature Range - Operating -40°C ~ 85°C
Mounting Style SMD
Manufacturer Package 67-VFBGA
Supplier Device Package 67-VFBGA (6.5x8)
Manufacturer Pack Quantity 338
MSL Level 3 (168 Hours)
Win Source Part Number 1264766-TC58NYG0S3HBAI6
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TC58NYG0S3HBAI6 CAD Model

Description

The TC58NYG0S3HBAI6 is a 1Gb (128M x 8) non-volatile NAND flash memory manufactured by Toshiba Memory America, Inc.

  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Access Time: 25ns
  • Package: 67-VFBGA
  • Memory Interface: Parallel
  • Write Cycle Time: 25ns
  • Temperature Range: -40°C to 85°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $3.9305 $51.0965
32+ $3.2251 $103.2032
49+ $3.1243 $153.0907
67+ $3.0235 $202.5745
86+ $2.9227 $251.3522
115+ $2.6204 $301.3460
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Availability: 1,060 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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