The TC7S02FU-F is a high-speed CMOS 2-input NOR gate from Toshiba Semiconductor and Storage. It is fabricated with silicon gate CMOS technology to achieve high-speed operation similar to equivalent bipolar Schottky TTL devices, while maintaining the low power dissipation characteristic of CMOS integrated circuits.

Applications

• General logic applications
• Signal inverting
• Wave shaping
• Oscillator circuits
• Low-power logic circuits

Features

• High-speed operation: tpd = 4.8 ns (typ.) at VCC = 5 V
• Low power dissipation: ICC = 1 μA (max) at VCC = 5 V
• Wide operating voltage range: VCC = 2 V to 6 V
• High noise immunity: VNIH = VNIL = 28 % VCC (min)
• Balanced propagation delays: tpLH ≈ tpHL
• Small package: US8

Benefits

• Improved system performance due to high-speed operation
• Reduced power consumption, making it suitable for battery-powered applications
• Flexible operation with a wide voltage range
• Increased system reliability due to high noise immunity
• Simplified circuit design due to balanced propagation delays
• Reduced board space requirements due to the small package size

Additional Details

The TC7S02FU-F operates over a wide temperature range and is available in a US8 package. It is pin-compatible with other standard logic gates. The input and output are fully buffered. The device is suitable for a wide range of applications that require high-speed, low-power logic functions.