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THGJFJT1E45BATP

Part No THGJFJT1E45BATP
Manufacturer Toshiba Semiconductor and Storage
Catalog IT infrastructure Memory
Description 256GB UFS4.0
Sample
Rohs State rohs
ECAD Module
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Category IT infrastructure Memory
Win Source Part Number 1455078-THGJFJT1E45BATP
Manufacturer Toshiba Semiconductor and Storage
Package Tray
Product Status Active
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 2Tbit
Memory Organization 256G x 8
Memory Interface UFS 4.0
Clock Frequency 2.32 GHz
Voltage - Supply 2.4V ~ 2.7V
Operating Temperature -25°C ~ 85°C
Grade -
Mounting Type Surface Mount
Package / Case 153-WFBGA
Supplier Device Package 153-WFBGA (11.5x13)
Ultra Librarian 3D Model Ultra Librarian THGJFJT1E45BATP CAD Model

Description

The THGJFJT1E45BATP is a high-performance memory component designed by KIOXIA (formerly Toshiba), under the UFS (Flash+Controller) product category. This model boasts a capacity of 256GB and employs the UFS4.0 standard, setting a new benchmark in the realm of high-speed data storage solutions. The UFS4.0 technology marks a significant leap forward, offering double the bandwidth per lane compared to UFS3.1, which significantly enhances the speed for reading and writing operations. This makes the THGJFJT1E45BATP an ideal choice for flagship smartphones, high-end digital cameras, and gaming devices that demand rapid data access and storage. It incorporates cutting-edge technology to ensure dependable performance and longevity, including advanced error correction, wear leveling, and power management features. Manufactured by KIOXIA, a leader in memory solutions, this product stands out for its reliability, efficiency, and superior data handling capabilities.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $115.6717 $115.6717
2+ $111.9403 $223.8806
3+ $108.2090 $324.6270
4+ $97.0150 $388.0600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 27 pieces
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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