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Same model may have multiple batches, images only for reference.
TJ20S04M3L(T6L1,NQ Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TJ20S04M3L(T6L1,NQ

Part No TJ20S04M3L(T6L1,NQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 40V 20A DPAK-3
Datasheet
TJ20S04M3L(T6L1,NQ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3V @ 1mA
Max Gate Charge 37nC @ 10V
Max Input Capacitance 1850pF @ 10V
Maximum Gate-Source Voltage +10V, -20V
Power Dissipation (Max) 41W (Tc)
Maximum Rds On at Id,Vgs 22.2 mOhm @ 10A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK+
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1107370-TJ20S04M3L(T6L1,NQ
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TJ20S04M3L(T6L1,NQ CAD Model

Description

The Toshiba TJ20S04M3L(T6L1,NQ) is a P-channel MOSFET with a maximum power dissipation of 41W.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 20A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 1mA
  • Maximum Gate Charge: 37nC @ 10V
  • Package: DPAK+ (TO-252-3, DPak (2 Leads + Tab), SC-63)
  • Mounting: SMD
  • Applications: power supplies, motor drives, and lighting

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $6.7233 $60.5097
21+ $5.5174 $115.8654
33+ $5.3442 $176.3586
45+ $5.1721 $232.7445
58+ $5.0000 $290.0000
78+ $4.4826 $349.6428
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Availability: 3,000 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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