This discrete semiconductor product is also manufactured by Toshiba Semiconductor and Storage and has a Win Source Part Number of 056639-TJ30S06M3L.

• Packaging: Reel - TR
• Mounting: SMD (SMT) technology
• Channel Type: P-channel MOSFET
• Power Dissipation (Max): 68W (Tc)
• Drive Voltage (max Rds On, min Rds On): 6V, 10V
• Status: Active
• Operating Temperature Range: 175°C (TJ)
• Package: DPAK+
• Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
• Drain-Source Breakdown Voltage: 60V
• Continuous Drain Current: 30A (Ta)
• Gate-Source Threshold Voltage: 3V @ 1mA
• Maximum Gate Charge: 80nC @ 10V
• Maximum Input Capacitance: 3950pF @ 10V
• Maximum Gate-Source Voltage: +10V, -20V
• Maximum Rds On @ Id,Vgs: 21.8 mOhm @ 15A, 10V
• Category: Discrete Semiconductor Products
• Popularity: Medium