The Toshiba Semiconductor and Storage TJ80S04M3L is a P-Channel MOSFET with a Drain-Source Breakdown Voltage of 40V and a Continuous Drain Current of 80A @ 25°C.

• Device Specs: The device has a maximum Rds On of 5.2 mOhm @ 40A and 10V.
• Gate Threshold Voltage: The gate-source threshold voltage is 3V @ 1mA, and the maximum gate charge is 158nC @ 10V.
• Capacitance: The maximum input capacitance is 7770pF @ 10V, and the maximum gate-source voltage is +10V and -20V.
• Package: The device is available in a DPAK+ package with TO-252-3, DPak (2 Leads + Tab), SC-63 dimensions.
• Application: The device is ideal for use in Discrete Semiconductor Products with a temperature range of 175°C (TJ) and a maximum power dissipation of 100W (Tc).
• Drive Voltage: The drive voltage (Max Rds On, Min Rds On) is 6V and 10V respectively.
• Alternative Parts: Alternative parts for cross-reference include IPD90P04P4-05, TJ80S04M3L(T6L1,NQ; and IPD90P04P405ATMA1.