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TK090N65Z,S1F

Part No TK090N65Z,S1F
Manufacturer Toshiba Semiconductor and Storage
Catalog OEM Souring
Description MOSFET 230W 1MHz TO-247
Sample
Rohs State rohs
ECAD Module
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Category OEM Souring
Win Source Part Number 1469429-TK090N65Z,S1F
Manufacturer Toshiba Semiconductor and Storage
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 90 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1.27mA
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2780 pF @ 300 V
Power Dissipation (Max) 230W (Tc)
Operating Temperature 150°C
Grade -
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
Ultra Librarian 3D Model Ultra Librarian TK090N65Z,S1F CAD Model

Description

The TK090N65Z,S1F is a high-performance MOSFET from Toshiba, designed to cater to the demanding requirements of modern high-power electronic circuits. Operating at 230W with a capability to switch at frequencies up to 1MHz, this device is encapsulated in a TO-247 package, known for its high thermal efficiency and ability to handle significant levels of power. It is primarily used in applications requiring efficient power conversion and control, such as in power supplies, renewable energy systems, and motor drives. The MOSFET features a unique structure that provides low on-resistance and high speed switching capabilities, which greatly enhances the efficiency of power circuits by minimizing energy loss and heat generation. Its robust design and manufacturing process ensure high reliability and durability, making it an ideal choice for developing sustainable and efficient electronic systems.

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