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TK100A08N1,S4X

Part No TK100A08N1,S4X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 214A TO220SIS / Trans MOSFET N-CH Si 80V 214A 3-Pin(3+Tab) TO-220SIS Magazine
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Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 80V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 130nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 9000pF @ 40V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 45W (Tc)
Rds On (Maximum) @ Id, Vgs 3.2 mOhm @ 50A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-220SIS
Package TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 796820-TK100A08N1,S4X
Popularity Medium
Supply and Demand Status Limited
Family Name TK100A08N1
ECCN EAR99
Country of Origin China
Estimated EOL Date 2030
Ultra Librarian 3D Model Ultra Librarian TK100A08N1,S4X CAD Model

Description

The Toshiba Semiconductor and Storage TK100A08N1,S4X is a MOSFET component from the U-MOSVIII-H series.

  • Current continuous drain: 100A (Tc) @ 25°C
  • Maximum power dissipation: 45W (Tc)
  • Drain source voltage: 80V
  • Gate charge: 130nC @ 10V
  • Maximum Vgs: ±20V
  • Rds On: 3.2 mOhm @ 50A, 10V
  • Input capacitance: 9000pF @ 40V
  • Package: TO-220-3 Full Pack, Isolated Tab
  • Win Source Part Number: 796820-TK100A08N1,S4X

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $3.7279 $52.1906
33+ $3.0588 $100.9404
51+ $2.9633 $151.1283
70+ $2.8677 $200.7390
91+ $2.7721 $252.2611
121+ $2.4853 $300.7213
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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