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TK100G10N1

Part No TK100G10N1
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family FETs - Single
Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 217119-TK100G10N1
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK100G10N1 CAD Model

Description

The TK100G10N1 is an N-channel power MOSFET from Toshiba Semiconductor and Storage designed for efficient power conversion and management. It is characterized by low on-resistance and fast switching speed, contributing to reduced power losses and improved system performance. The device is typically available in a through-hole package, making it suitable for applications requiring robust mechanical mounting and heat dissipation.

Applications:

  • DC-DC Converters
  • AC-DC Power Supplies
  • Motor Control Circuits
  • Uninterruptible Power Supplies (UPS)
  • Power Management in Industrial Equipment

Features:

  • N-Channel MOSFET
  • Low Drain-Source On-Resistance (RDS(on)): Reduces conduction losses and improves efficiency.
  • High Drain Current (ID) Capability: Enables the device to handle significant loads.
  • Fast Switching Speed: Minimizes switching losses and allows for higher frequency operation.
  • Through-Hole Package: Provides robust mechanical mounting and heatsinking capabilities.
  • High Avalanche Energy Rating: Offers improved ruggedness and reliability.

Benefits:

  • Improved Energy Efficiency: The low on-resistance and fast switching speed minimize power losses.
  • Increased Power Density: The high current capability allows for more power to be delivered in a smaller footprint.
  • Enhanced System Reliability: The robust design and high avalanche energy rating contribute to improved system reliability.
  • Simplified Thermal Management: The through-hole package facilitates effective heat dissipation.
  • Cost-Effective Solution: Offers a balance of performance, reliability, and cost.

Additional Details:

The TK100G10N1 typically features a drain-source voltage (VDS) rating of 100V and a continuous drain current (ID) rating dependent on specific operating conditions – refer to the datasheet. The gate-source voltage (VGS) rating is typically ±20V. The MOSFET generally utilizes advanced trench technology for optimized on-resistance and switching performance. Proper gate drive circuitry and thermal management are crucial for optimal performance and long-term reliability. Always consult the official datasheet for detailed electrical characteristics and application guidelines.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.9342 $59.2104
29+ $4.0483 $117.4007
45+ $3.9224 $176.5080
61+ $3.7953 $231.5133
79+ $3.6694 $289.8826
106+ $3.2894 $348.6764
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,270 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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