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TK10A55D

Part No TK10A55D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 550V 10A TO-220SIS
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 550V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 720 mOhm @ 5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 056640-TK10A55D
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TK10A55D CAD Model

Description

The Toshiba Semiconductor and Storage TK10A55D MOSFET from is a high-quality product that is designed to offer reliable performance.

  • Supply and Demand Status: Balanced
  • Maximum Power Dissipation: 45W
  • Maximum Drain-Source Breakdown Voltage: 550V
  • Gate-Source Threshold Voltage: 4V @ 1mA
  • Maximum Gate Charge: 24nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $21.3259 $63.9777
7+ $17.4983 $122.4881
11+ $16.9508 $186.4588
15+ $16.4045 $246.0675
19+ $15.8582 $301.3058
25+ $14.2169 $355.4225
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,910 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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