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TK10A60D

Part No TK10A60D
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 600V 10A 3-Pin(3+Tab) TO-220SIS / MOSFET N-CH 600V 10A TO220SIS
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1350pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 750 mOhm @ 5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 043096-TK10A60D
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name TK10A60D
Introduction Date June 04, 2008
ECCN EAR99
Country of Origin China, Malaysia
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian TK10A60D CAD Model

Description

The Toshiba Semiconductor and Storage TK10A60D MOSFET from is a reliable and high-quality solution for your discrete semiconductor needs.

  • Package: Tube/Rail
  • Mounting Type: Through Hole
  • MOSFET Polarity: N-Channel
  • Maximum Power Dissipation: 45W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Case/Package: TO-220SIS
  • Dimensions: TO-220-3 full pack
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 10A (Ta) @ 25°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.5710 $59.9550
250+ $0.4685 $117.1250
385+ $0.4539 $174.7515
530+ $0.4393 $232.8290
685+ $0.4246 $290.8510
915+ $0.3807 $348.3405
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,001 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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