The TK10P60W,RVQ is a MOSFET technology-based Super Junction FET integrated circuit (IC) manufactured by Toshiba Semiconductor and Storage.

• Polarity: This N-channel polarity IC has a drain-source breakdown voltage of 600V and a maximum continuous drain current @ 25°C of 9.7A (Ta).
• Gate-Source Threshold Voltage: It has a gate-source threshold voltage of 3.7V @ 500μA
• Maximum Gate Charge: and a maximum gate charge of 20nC @ 10V.
• Package: The IC is mounted in a DPAK package with TO-252-3, DPak (2 Leads + Tab), SC-63 dimensions.
• Input Capacitance: It has a maximum input capacitance of 700pF @ 300V
• Maximum Rds On: and a maximum Rds On @ Id,Vgs of 430 mOhm @ 4.9A, 10V.
• Market Status: The device is active and has a medium popularity in the market.
• Packaging: It is available in reel packaging and has a balance in supply and demand status.