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Same model may have multiple batches, images only for reference.
TK10Q60W,S1VQ Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TK10Q60W,S1VQ

Part No TK10Q60W,S1VQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 9.7A IPAK  /  N-Channel 600 V 9.7A (Ta) 80W (Tc) Through Hole I-Pak
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 430mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 300 V
Power Dissipation (Max) 80W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Stub Leads, IPak
Base Product Number TK10Q60
MSL Level Not Applicable
ECCN EAR99
HTSUS 8541.29.0095
Other Names TK10Q60W,S1VQ(S,TK10Q60WS1VQ
Standard Package 75
Win Source Part Number 1005398-TK10Q60W,S1VQ
Ultra Librarian 3D Model Ultra Librarian TK10Q60W,S1VQ CAD Model

Description

The Toshiba Semiconductor and Storage TK10Q60W,S1VQ is an N-channel MOSFET transistor with a drain-to-source voltage (Vdss) of 600V and a continuous drain current (Id) of 9.7A @ 25°C.

  • On-Resistance (Rds On): 430mOhm @ 4.9A and 10V gate-source voltage (Vgs)
  • Gate Threshold Voltage (Vgs(th)): 3.7V @ 500μA
  • Power Dissipation: 80W @ a case temperature (Tc) of 25°C
  • Package/Case: TO-251-3 Stub Leads, IPak
  • Operating Temperature Range: up to 150°C

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