The TK11A50D is an N-channel MOSFET manufactured by Toshiba Semiconductor and Storage.

• Power Dissipation: It has a maximum power dissipation of 45W and a drain-source breakdown voltage of 500V.
• Drain Current: The maximum continuous drain current @ 25°C is 11A and the gate-source threshold voltage is 4V @ 1mA.
• Capacitance: The maximum input capacitance is 1200pF @ 25V and the maximum gate-source voltage is ±30V.
• Package: The package is TO-220SIS and the dimensions are TO-220-3 Full Pack.
• Supply and Demand: The supply and demand status for this part is balanced.
• Applications: This MOSFET is ideal for use in high voltage power switching applications.