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Same model may have multiple batches, images only for reference.
TK11S10N1L,LQ
Same model may have multiple batches, images only for reference.

TK11S10N1L,LQ

Part No TK11S10N1L,LQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 11A DPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 28mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 10 V
FET Feature -
Power Dissipation (Max) 65W (Tc)
Temperature Range - Operating 175°C
Mounting Type Surface Mount
Supplier Device Package DPAK+
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number TK11S10
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376832-TK11S10N1L,LQ
Ultra Librarian 3D Model Ultra Librarian TK11S10N1L,LQ CAD Model

Description

The TK11S10N1L,LQ is a N-Channel MOSFET transistor from Toshiba Semiconductor and Storage's U-MOSVIII-H series.

  • Vdss: 100V
  • Id @ 25°C: 11A
  • Rds On: 28mOhm @ 5.5A and 10V
  • Qg @ 10V: 15nC
  • Ciss @ 10V: 850pF
  • Power Dissipation: 65W
  • Package: TO-252-3, DPak
  • Mounting Type: Surface Mount
  • Status: Active
  • Operating Temperature: -40°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.4680 $51.4800
265+ $0.3840 $101.7600
405+ $0.3720 $150.6600
560+ $0.3600 $201.6000
720+ $0.3480 $250.5600
965+ $0.3120 $301.0800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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