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TK160F10N1,LXGQ Toshiba Semiconductor and Storage TK160F10N1,LXGQ Real Image1 TK160F10N1,LXGQ Real Image2 TK160F10N1,LXGQ Real Image3
Same model may have multiple batches, images only for reference.
TK160F10N1,LXGQ Toshiba Semiconductor and Storage TK160F10N1,LXGQ Real Image1 TK160F10N1,LXGQ Real Image2 TK160F10N1,LXGQ Real Image3
TK160F10N1,LXGQ Toshiba Semiconductor and Storage TK160F10N1,LXGQ Real Image1 TK160F10N1,LXGQ Real Image2 TK160F10N1,LXGQ Real Image3
Same model may have multiple batches, images only for reference.

TK160F10N1,LXGQ

Part No TK160F10N1,LXGQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 160A TO220SM  /  N-Channel 100 V 160A (Ta) 375W (Tc) Surface Mount TO-220SM(W)
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tape & Reel
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 160A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 121 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8510 pF @ 10 V
Power Dissipation (Max) 375W (Tc)
Temperature Range - Operating 175°C
Mounting SMD (SMT)
Supplier Device Package TO-220SM(W)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number TK160F10
MSL Level 3 (168 Hours)
ECCN EAR99
HTSUS 8541.21.0095
Other Names 264-TK160F10N1LXGQCT,TK160F10N1,LXGQ(O,264-TK160F10N1LXGQTR,264-TK160F10N1LXGQDKR
Standard Package 1,000
Win Source Part Number 1140834-TK160F10N1,LXGQ
Ultra Librarian 3D Model Ultra Librarian TK160F10N1,LXGQ CAD Model

Description

The Toshiba Semiconductor and Storage electronic component with Win Source Part Number 1140834-TK160F10N1,LXGQ is a MOSFET (Metal Oxide) transistor.

  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id): 160A (Ta) @ 25°C
  • Maximum Rds On: 2.4mOhm @ 80A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
  • Series: U-MOSVIII-H
  • Package: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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2+ $40.3395 $80.6790
4+ $33.0988 $132.3952
6+ $32.0651 $192.3906
8+ $31.0302 $248.2416
10+ $29.9965 $299.9650
13+ $26.8930 $349.6090
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Availability: 6,000 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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