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Same model may have multiple batches, images only for reference.
TK16A60W5 Real Image
Same model may have multiple batches, images only for reference.

TK16A60W5

Part No TK16A60W5
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 600V 15.8A TO-220SIS
Datasheet
TK16A60W5 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 1.5mA
Max Gate Charge 43nC @ 10V
Max Input Capacitance 1350pF @ 300V
Maximum Gate-Source Voltage ±30V
FET Feature Super Junction
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 190 mOhm @ 7.9A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 212868-TK16A60W5
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK16A60W5 CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a high-quality electronic component with a super junction FET feature and an N-Channel polarity.

  • Feature: super junction FET
  • Polarity: N-Channel
  • Maximum Power Dissipation: 40W
  • Continuous Drain Current: 15.8A @ 25°C
  • Category: Discrete Semiconductor Products
  • Mounting: through a hole
  • Supply and demand status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.8494 $62.7952
18+ $6.4403 $115.9254
28+ $6.2393 $174.7004
39+ $6.0383 $235.4937
50+ $5.8362 $291.8100
67+ $5.2333 $350.6311
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,900 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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