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TK17A80W,S4X

Part No TK17A80W,S4X
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 17A TO220SIS / N-Channel 800 V 17A (Ta) 45W (Tc) Through Hole TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 17A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4V @ 850µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2050 pF @ 300 V
Power Dissipation (Max) 45W (Tc)
Temperature Range - Operating 150°C
Mounting Through Hole
Supplier Device Package TO-220SIS
Case / Package TO-220-3 Full Pack
Base Product Number TK17A80
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number TK17A80W,S4X(S,TK17A80WS4X
Standard Package 50
Win Source Part Number 1324113-TK17A80W,S4X
Ultra Librarian 3D Model Ultra Librarian TK17A80W,S4X CAD Model

Description

The Toshiba Semiconductor and Storage TK17A80W,S4X is an N-Channel MOSFET transistor that is ideal for use in electronic devices that require a high-performance transistor.

  • Drain to Source Voltage: 800V
  • Continuous Drain Current: 17A
  • Maximum Rds On: 290mOhm @ 8.5A, 10V
  • Gate Charge: 32 nC @ 10 V
  • RoHS3 compliant: Yes
  • Package: tube package

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.7049 $51.1470
75+ $1.3989 $104.9175
115+ $1.3552 $155.8480
155+ $1.3115 $203.2825
200+ $1.2678 $253.5600
265+ $1.1366 $301.1990
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,357 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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